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Cu doped ZnO (Cu: ZnO, CZO) Nanorod films (NRF) are fabricated on CZO thin films (TF) coated FTO substrates by hydrothermal method.The microstructure, Ⅰ-Ⅴ characteristics, retention measurement and switching voltage distribution are investigated.The doping of Cu2+, helps to improve the quality of crystallization and effectively compensates the intrinsic defects of nanorods, in the mean time, enhances the oriented growth of nanorods along c axis and increases the aspect ratio.The prepared Ag/CZO NRF/CZO TF/FTO devices exhibit bipolar resistive switching behaviors with a high OFF/ON ratio of 103.Compared with sol-gel derived CZO thin films, CZO NRF/CZO TF bilayer structures show narrow distribution of VsET and good stability of High Resistance State (HRS) and Low Resistance State (LRS), with the VSET of +0.3 ~ 1.5V and a high OFF/ON ratio of 103.CZO nanorods provide conductive filaments with not only large quantities of oxygen vacancy, but also orderly arrangement and uniform size of conductive filaments, which results in the decreased random formation of conductive filaments.Meanwhile, in this paper, the effect of compliant current ICC on Ⅰ-Ⅴ characteristics is investigated.OFF/ON ratio is related with the value of ICC, and a low value of ICC results in a low OFF/ON ratio.When ICC =10mA and 1mA, Roff/Roff ≈ 875 and 5.2, respectively.