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5. Detection of Defects in Epitaxial Graphene on SiC through Anisotropic Hydrogen Plasma Etching

Detection of Defects in Epitaxial Graphene on SiC through Anisotropic Hydrogen Plasma Etching

来源 :The 4th International Conference of Recent Progress in Graph | 被引量 : 0次 | 上传用户：longxmb

【作 者】

：

Jing-jing Lin Xiao-long Chen Li-wei Guo Rong Yang Yu-ping Jia Lian-lian Chen Wei Lu Jiao Huang Zhi-lin Li Guang-yu Zhang 

【机 构】

：

Research&DevelopmentCenterforFunctionalCrystals,BeijingNationalLaboratoryforCondensedMatterPhysics,I

【出 处】

：

The 4th International Conference of Recent Progress in Graph

【发表日期】

：

2012年10期

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