Chemical-Potential-Dependent Gap Opening at the Dirac Surface States of Bi2Se3 Induced by Aggregated

来源 :第十八届全国凝聚态理论与统计物理学术会议 | 被引量 : 0次 | 上传用户:chenhua99
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With angle-resolved photoemission spectroscopy, gap opening is resolved at up to room temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 topological insulator films, which,however, show no long-range ferromagnetic order down to 1.5 K.The gap size is found decreasing with increasing electron-doping level.Scanning tunneling microscopy and first-principles calculations demonstrate that substitutional Cr atoms aggregate into superparamagnetic multimers in the Bi2Se3 matrix, which contribute to the observed chemical-potential-dependent gap opening in the Dirac surface states without long-range ferromagnetic order.
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