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  5. Calculation of phase diagrams of epitaxial in AlxIn1-xAs/InP,AsxSb1-xAl/InP and AlxIn1-xSb/Insb film

Calculation of phase diagrams of epitaxial in AlxIn1-xAs/InP,AsxSb1-xAl/InP and AlxIn1-xSb/Insb film

来源 :第十四届全国相图会议暨国际相图与材料设计研讨会 | 被引量 : 0次 | 上传用户：weipan51
【摘 要】
：
The models of phase diagram calculation of semiconductor thin films with different substrates were proposed by considering the contributions of strain energy，self energy of misfit dislocations and sur
【作 者】
：
Y.Lu C.P.Wang X.J.Liu 
【机 构】
：
Department of Materials Science and Engineering,College of Materials,and Research Center of Material
【出 处】
：
第十四届全国相图会议暨国际相图与材料设计研讨会
【发表日期】
：
2008年4期
【关键词】
：
计算相图 半导体薄膜 闪锌矿 
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论文部分内容阅读
The models of phase diagram calculation of semiconductor thin films with different substrates were proposed by considering the contributions of strain energy，self energy of misfit dislocations and surface energy to Gibbs free energy．Phase diagrams of epitaxial in AlxIn1-xAs/InP，AsxSb1-xAl/InP and AlxIn1-xSb/InSb films at various thicknesses were calculated．The calculated results indicate that the region of zinc-blende type phase and compositional latching areas are extended as thickness of the layer decreases，and the effect of the liquid and solid surface energy on the phase diagram appears little．
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