论文部分内容阅读
利用低压金属有机化学气相沉积(LP-MOCVD)生长工艺,采用三乙基硼(TEB)源,在GaAs(001)衬底上生长了B并入比为0.4%～4.4%的一系列BxAl1-xAs合金。实验结果表明,BxAl1-xAs的最优生长温度为580℃;当生长温度为550℃和610℃时,BxAl1-xAs中B并入比都会下降,550℃时B并入比下降更为显著。在580℃最优生长温度下,B并入比随着TEB摩尔流量增加而提高,且B并入比从临界值2.1%增加至最大值4.4%时,DCXRDω-2θ扫描BxAl1-xAs衍射峰的半高宽值从51.8 arcsec升高到204.7 arcsec,原子力显微镜(AFM)测试表面粗糙度从2.469 nm增大到29.086 nm,说明B并入比超过临界值后BxAl1-xAs晶体质量已经逐渐严重恶化。
A series of BxAl1-xCb-based B-type Al-Si alloys were grown on GaAs (001) substrates by using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) xAs alloy. The experimental results show that the optimum growth temperature of BxAl1-xAs is 580 ℃. When the growth temperature is 550 ℃ and 610 ℃, the B incorporation ratio of BxAl1-xAs decreases and the B incorporation ratio decreases more significantly at 550 ℃. At the optimal growth temperature of 580 ℃, the B incorporation ratio increased with the increase of the TEB molar flow rate, and the B incorporation ratio increased from the critical value of 2.1% to the maximum value of 4.4%, DCXRDω-2θ scan BxAl1-xAs diffraction peak The FWHM increased from 51.8 arcsec to 204.7 arcsec. The surface roughness of the AFM increased from 2.469 nm to 29.086 nm, indicating that the mass of BxAl1-xAs crystal has gradually deteriorated after the B-integration ratio exceeds the critical value.