Heterojunction effect on contact resistance minimization in staggered pentacene thin-film transistor

来源 :2016第二届有机光电材料与器件国际会议 | 被引量 : 0次 | 上传用户：qgz111

【摘要】

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【作者】

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Ya-Nan Zhong Sui-Dong Wang Xu Gao

【机构】

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Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices,Institute of Functional Nano

【出处】

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2016第二届有机光电材料与器件国际会议

【发表日期】

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2016年5期

【关键词】

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Contact resistance organic thin-film transistors pentacene MoO3

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　　Organic thin-film transistors(OTFTs)have the potential in future flexible electronics,including radio frequency identification(RFID)tags,sensors,nonvolatile memories,etc.[1–3] A key issue remains in OTFTs is their huge contact resistance(RC).[4– 6] For pentacene-based OTFTs,RC is determined by the hole injection barrier at the metal/pentacene interface and the access resistance from the interface to the conducting channel.

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Heterojunction effect on contact resistance minimization in staggered pentacene thin-film transistor

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