Recently,2D materials,such as graphene,MoS2,TaSe2 and WS2,have received great research interests due to their unique electronic,optical,and chemical properties.Mica is a well-known layered silicate compound and an extremely useful material which is stable upon exposure to electricity,light,moisture,and extreme temperatures.[1] Here,we reported our studies on Mica thin films with thickness of~4nm grown on sapphire(0001)substrates by pulsed laser deposition(PLD)method.The as-grown mica thin films are studied by spectroscopic ellipsometry,in situ reflection high energy electron diffraction(RHEED),x-ray diffraction(XRD),field emission scanning electron microscopy(FESEM),atomic force microscopy(AFM),and x-ray photoelectron spectroscopy(XPS).The RHEED patterns of annealed sapphire substrates showed sharp streaky.After the growth of mica,the sample exhibited sharp first order spots along the(100)azimuth with a root-mean-square surface roughness of 0.19nm,as expected for a flat surface,[2] The x-ray diffraction peaks centered at 9.16 and 27.08° are assigned as the {001 } and {003 } planes of fluorphiogopite mica.The major constituent peaks including O 1s,Si 2p,Al 2p,Mg 1s,F 1s,and K 2p occurred in the XPS spectra.Our experimental results demonstrate that PLD technique is an effective approach to obtain high-quality mica thin films.