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5. The Effect of Polar Fluctuation and Lattice Mismatch on Carrier Mobility at Oxide Interfaces

The Effect of Polar Fluctuation and Lattice Mismatch on Carrier Mobility at Oxide Interfaces

来源 :The 23rd International Workshop on Oxide Electronics (第23届国际 | 被引量 : 0次 | 上传用户：donny_zhu

【作 者】

：

Z.Huang K.Han S.W.Zeng M.Motapothula A.Y.Borisevich S.Ghosh W.M.Lü C.J.Li W.X.Zhou Z.Q.Liu J.M.D.Coey T.Venkatesan Ariando 

【机 构】

：

NUSNNI-NanoCore,NationalUniversityofSingapore,Singapore117411;DepartmentofPhysics,NationalUniversity

【出 处】

：

The 23rd International Workshop on Oxide Electronics (第23届国际

【发表日期】

：

2016年10期

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