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Copper doped cobalt oxide thin films were deposited at 300,423 and 573K on glass substrates by reactive ion beam sputter deposition.
Low Resistivity Copper Doped Cobalt Oxide Thin Films By Reactive Ion Beam Sputter Deposition
【摘 要】
：
Copper doped cobalt oxide thin films were deposited at 300,423 and 573K on glass substrates by reactive ion beam sputter deposition.
【机 构】
：
Department of Electronic and Computer Engineering,National Taiwan University of Science and Technolo
【出 处】
：
2015台湾物理年会
【发表日期】
：
2015年期
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