Firstly,undoped ZnO thin films were prepared on glass substrates by Sol-Gel dip-coating (by assembled diminutive dip-coating device),and radiofrequency magnetron sputtering respectively.X-ray diffraction(XRD).Scanning Electron Microscopy(SEM),Spectrophotometer,Surface profilometry were used to characterize their properties.The results indicated:on the glass substrates,at the same annealed temperature,the films prepared by radio-frequency magnetron sputtering had more excellent crystallization quality.Then,Al-doped (ZnO:Al(ZAO)) thin films were solely prepared on glass substrates by Sol-Gel dip-coating method(by assembled diminutive dip-coating device),Scanning Electron Microscopy(SEM),UV-Visible spectrophotometry(UVVis),digital four-point probe electrical resistance measurement were used to characterize their surface morphologies,transmission property,film thickness,resistance etc.The results indicated:The morphologies of ZAO thin films were more compact when the Al3+ dopant concentration was 1.0at%;with increasing annealing temperature,the average grain size of the film increased,the resistance decreased.Under the Al3+ dopant concentration of 1.5at%,annealing temperature of 550℃ and annealing time of 2h,the average transmissivity of the film exceeded 70% within the visible region and resistance was 5.9×10-2Ω.cm.