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5. Atomic Scale Characterization of Novel Semiconductor Nanostructures for Optoelectronic Applications

Atomic Scale Characterization of Novel Semiconductor Nanostructures for Optoelectronic Applications

来源 :IUPAC 9th International Conference on Novel Materials and th | 被引量 : 0次 | 上传用户：kebo824

【摘 要】

：

Due to the comparably low lattice mismatch, GaP is a promising material for the direct integration of optically active Ⅲ-Ⅴ-semiconductor nanostructures into silicon-based technology.Hence, the develop

【作 者】

：

H.Eisele 

【机 构】

：

Institute of Solid State Physics, Technische Universit(a)t Berlin, 10623 Berlin, Germany

【出 处】

：

IUPAC 9th International Conference on Novel Materials and th

【发表日期】

：

2013年2期

【关键词】

：

nanostructures optoelectronics scanning tunneling microscopy photonics 

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论文部分内容阅读

Due to the comparably low lattice mismatch, GaP is a promising material for the direct integration of optically active Ⅲ-Ⅴ-semiconductor nanostructures into silicon-based technology.Hence, the development of epitaxially grown quantum dots on GaP(001) substrates for opto-electronic devices is an interesting new task.

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