【摘 要】
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Boron nitride(BN)is an important wide-gap semiconductor,possessing relatively high melting point,mechanical strength,hardness,excellent corrosion and oxidat
【机 构】
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College of Chemistry & Chemical Engineering,Guangxi University,Nanning,People' s Republic of China
【出 处】
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The 5th International Congress on Ceramics, ICC5(第五届国际陶瓷大会)
论文部分内容阅读
Boron nitride(BN)is an important wide-gap semiconductor,possessing relatively high melting point,mechanical strength,hardness,excellent corrosion and oxidation resistance,which make BN nanotubes potential for use in variety of fields such as composites,nanoscale electronic and photonic devices.Chemical vapor deposition(CVD)is an important and efficient method for the synthesis of high-purity BN nanotubes.However,in previous CVD method,metal oxides are usually adopted to oxidize boron powder into intermediate boron oxide(B2O2)vapor that was proved to be vital for the formation of BN nanotubes.
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