Structural,Electronic and Mechanic Properties of Graphene Grain Boundaries

来源 :第十二届国际凝聚态理论与计算材料学会议(The 12th International Conference on Con | 被引量 : 0次 | 上传用户:qhxfxfxf
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
  In the experimental synthesis of graphene using the chemical vapor deposion methods, it is inevitable to get the polycrystalline graphene composed of many grains and grain boundaries(GBs).
其他文献
The triazine-based graphitic C3N4(g-C3N4)sheet,which has been recently synthesized in experiment,is promising in gas storage due to its porous structure and light mass.In this work,we have studied hyd
We show graphene discerns an unconventional sequence of quantized Hall conductivity, when subject to both magnetic fields(B)and strain through both theoretical arguments and numerical calculations. Th
通过第一性原理计算,我们系统的研究了在Ag(111)面上的硅烯的各种位形结构((2x2)silicene/(√7×√7)Ag(111),(√7×,√7)silicene/(2√3×2√3)Ag(111),(√7×√7)silicene/(√13×√13)Ag(111))及其电子性质.我们发现,在所有的位型中,硅烯的狄拉克锥都移到了费米面以下约1.5 eV.并且,由于硅烯与Ag沉底之间的能带杂化,狄
会议
碳基超级电容器电化学储能性能取决于其电极/电解质界面形成的双电层.本文使用分子动力学方法,选用石墨烯和氧化石墨烯碳基纳米材料,氯化钠溶液作为电解质,开展了电极/电解质溶液的界面结构模拟,对双电层界面的离子的动力学特性(扩散率、电导率等)、结构特性(电解质密度分布、电荷分布等)和电化学特性(比电容等)进行探究.计算结果表明,在石墨烯材料和氧化石墨烯电极界面,溶液分子受到极板分子间作用和静电库伦作用,
Titanium dioxide dye-sensitized solar cells(Ti02-DSSCs)have been intensively investigated and developed due to their high efficiency, simple fabrication process and low production cost compared with s
Abalance-equation scheme is developed to investigate the magnetotransport in a dc current biased graphene.We examine the Shubnikov-de Haas oscillation under a nonzero bias current.With an increase in
The anisotropic optical and thermoelectric properties of In4Se3 and In4Te3 are studied by the first-principles calculation using the full-potential linearized augmented plane-wave method and the semic
One of the biggest challenges to the applications of graphene is to fabricate three dimensional(3-D)architectures of graphene sheets which inherit its excellent intrinsic properties but overcome its s
会议
在限制于GaAs/A1GaAs异质结中的二维电子气上形成的量子点接触,电导出现以G0=2e2/h为单位的量子台阶,可以在单粒子模型下得到很好的解释,早期,由Glazman和Khaetskii预言,当提高源漏偏压时,电导整数平台G=N×2e2/h逐渐过渡到半整数平台G=(N-1/2×2e2/h,其中N=1,2,3…当G≥2e2/h时,这个理论的预言与实验吻合,但在G<2e2/h时,所有相关实验表明平