Large-scale Production of Ultrathin Topological Insulator Bismuth Telluride Nanosheets by Intercalat

来源 :中国物理学会2011年秋季学术会议 | 被引量 : 0次 | 上传用户:lionsky
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices.[1] As a single Dirac-cone topological insulator with a large bulk gap,the layered bismuth telluride (Bi2Te3) which coupled by weak van der Waals interaction between adjacent quintuple layers,can be either exfoliated by mechanical exfoliation[2] and sonication[3],or intercalated by lithium cations between the layers[4].
其他文献
The electronic transport properties of the symmetric and asymmetric zigzag graphene nanoribbons based nanostructures whose edges are modified by the triangle uplifts are studied by using the first-pri
金团簇被用于催化反应,其激发态的研究也被广泛关注,我们希望能找到控制其激发态来为它的催化反应提供新的途径.通过使用第一性原理方法,来计算MgO/Ag(001)衬底上的Au8 及金薄膜,研究表面对于金团簇的影响.
会议
当薄膜厚度远小于光学波长时,由于薄膜的表面效应,薄膜的光学常数不仅具有波长色散关系,而且随薄膜厚度改变.对于不同厚度的薄膜,同一波长也会具有不同光学常数.
Graphene存在着各种类型的缺陷[1-4],实验观测到Ni(111)表面的Graphene产生5-8线性拓扑缺陷结构的晶界,并且晶界表现出金属线的特性[5].我们采用分子动力学模拟方法研究了Graphene在Ni(111)表面的生长行为,Graphene在Ni(111)表面表现出Top-Hcp、Top-Fcc和Hcp-Fcc三种典型原子占位结构,其结构稳定性以Top-Fcc最好,Top-Fcc
Alkanethiol self-assembled monolayers (SAMs) have been attracted considerately attentions during last two decades due to its easy preparation and highly ordered 2D structure.Despite its simplicity and
Bi2Se3-type materials are second generation topological insulators (TIs),featuring single Dirac cone at the Γ point[1-4].Sb2Se3 is of the same structure as Bi2Se3 but behaves as a normal insulator(NI)
会议
We report on the configurations and electronic properties of graphyne and graphdiyne nanoribbons with armchair and zigzag edges investigated with first principles calculations.Our results show that al
会议
会议