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5. Structural and Electrical Properties of High C-orientation GaN Films on Diamond Substrates

Structural and Electrical Properties of High C-orientation GaN Films on Diamond Substrates

来源 :2011年材料表面与界面国际大会 | 被引量 : 0次 | 上传用户：ji1ji2

【作 者】

：

Dong ZHANG Yizhen BAI 

【机 构】

：

School of Physics and Optoelectronic Technology, Dalian University of Technology,Dalian 116024 China

【出 处】

：

2011年材料表面与界面国际大会

【发表日期】

：

2011年9期

【关键词】

：

GaN films diamond films SAW devices ECR-PEMOCVD 

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