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5. ZnO Nanostructure Based Light-Emitting Devices

ZnO Nanostructure Based Light-Emitting Devices

来源 :8th International Conference on Nanophotonics(2015年第八届国际纳米光子 | 被引量 : 0次 | 上传用户：chf012183

【摘 要】

：

　　Zinc oxide (ZnO) is a wide bandgap semiconductor with its bandgap of 3.37 eV.Besides its large bandgap,one of the most noteworthy properties of ZnO lies in

【作 者】

：

C.X.Shan;F.Sun;J.S.Liu;H.Shen;X.Y.Liu;D.Z.Shen; 

【机 构】

：

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics

【出 处】

：

8th International Conference on Nanophotonics(2015年第八届国际纳米光子

【发表日期】

：

2015年期

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论文部分内容阅读

　　Zinc oxide (ZnO) is a wide bandgap semiconductor with its bandgap of 3.37 eV.Besides its large bandgap,one of the most noteworthy properties of ZnO lies in its large exciton binding energy,which ensures that efficient excitonic emission and low-threshold lasing may be realized from this material.

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