SINGULAR is a multi chamber PECVD production tool,which allows to deposit mono or multi layers of different material on silicon solar wafers using an inductively coupled plasma (ICP).Every deposition chamber is a totally independent vacuum subunit which allows for deposition of complete layer stacks for passivation without vacuum interruption at high deposition rates,suitable for industrial production of e.g.PERC.Furthermore the multi chamber concept fits ideal to deposit complete stacks of intrinsic or doped layers for heterojunction silicon wafer solar cells.One of the major features of the ICP technology is the high plasma density at low ion energy as well as the low contamination due to the fact that the electrodes are separated from the process plasma.These plasma properties are ideal to deposit high quality layers.We firstly report on the study of ICP deposited layer stacks on the basis of AlOx/SiNy for either rear side passivation on p-type material or front side passivation/anti reflective coating of n-type cell architectures.Key parameters like deposition rate,effective carrier life times and fire stability are presented.The second focus is on the study of heterojunction layer stacks based on intrinsic or n-and p-doped a-Si:H alloys.We report on excellent interface passivation achieved by using a-Si:H/ SiNx stack on n-type wafers.The industrial application of these films on the SINGULAR production tool platform is discussed.