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  5. Low Temperature and Press-Free Wafer Bonding Method for Monolithic 3D-ICs

Low Temperature and Press-Free Wafer Bonding Method for Monolithic 3D-ICs

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：ljmldblh
【摘 要】
：
Monolithic 3D-IC is one of the solutions to tackle large delay and power dissipation problems from interconnects.The key requirement for the monolithic 3D-IC is to achieve Si,Ge,or Ⅲ-Ⅴ film on insulat
【作 者】
：
Jae-Woo Shim In-yeal Lee Gil-Ho Kim Jin-Hong P 
【机 构】
：
Department of Electronics and Radio Engineering, College of Electronics and Information, Kyung Hee U
【出 处】
：
2011年第三届微电子及等离子体技术国际会议
【发表日期】
：
2011年9期
【关键词】
：
Bonding Sol-gel and Press-free 
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论文部分内容阅读
Monolithic 3D-IC is one of the solutions to tackle large delay and power dissipation problems from interconnects.The key requirement for the monolithic 3D-IC is to achieve Si,Ge,or Ⅲ-Ⅴ film on insulating layer at below 400 ℃.
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