【摘 要】
：
AIN is an important wide-band gap semiconductor with a band gap of 6.2 eV at room temperature.This material is promising for UV optoelectronic apparatus, RF power electronic device and field emission
【机 构】
：
Research & Development Center for Functional Crystals,Beijing National Laboratory for Condensed Matt
【出 处】
：
International Conference on Nanoscience & Technology,China 2
论文部分内容阅读
AIN is an important wide-band gap semiconductor with a band gap of 6.2 eV at room temperature.This material is promising for UV optoelectronic apparatus, RF power electronic device and field emission applications, since it exhibits superior properties such as excellent thermal conductivity, low thermal expansion coefficient, high electrical resistivity, high resistance to chemicals, transparency in the UV range, and negative electron affinity.Recently, great efforts have been made in preparation of low-dimensional inorganic semiconductors.
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