Origin of the green luminescence centered at 522nm in ZnO films

来源 :第四届国际表面与界面科学与工程学术会议(The Fourth International Conference on S | 被引量 : 0次 | 上传用户：metasearch

【摘要】

：

【作者】

：

Lanxi Wang Xuekang Chen Weihua Han Yunfei Wang Gan Wu

【机构】

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National Key Laboratory of Science and Technology on Surface Engineering,Lanzhou Institute of Physic

【出处】

：

第四届国际表面与界面科学与工程学术会议(The Fourth International Conference on S

【发表日期】

：

2009年12期

【关键词】

：

Zinc oxide Oxygen plasma treatment Native defect Green luminescence

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　　Room temperature photoluminescence spectra were achieved from ZnO films post-treated in oxygen plasma with different time.Two emission lines centered at about 387nm and 522nm were observed.As a rule,the UV emission line centered at about 387nm was ascribed to the near band edge emission.The green luminescence centered at 522nm enhanced with the increase of treating time in oxygen plasma.Decrease of Zn-O bond and increase of O-O bond with the increase of treating time could be deduced from the Zn2p and O1s lines measured by X-ray photoelectron spectroscopy.These tendencies were estimated to be due to the increase of oxygen antisites (OZn) in the films induced by the bombardment and implant effects of the oxygen plasma.

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Origin of the green luminescence centered at 522nm in ZnO films

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