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We have investigated the effects of Ga doping concentration on the structural,electrical,and optical properties of hydrogenated ZnO-Ga (GZO) thin films deposited by sol-gel technique.From the X-ray diffraction observations,the films doped with different gallium concentrations are found to be pure wurtzite-structured ZnO.The electrical properties of the hydrogen-annealed films were improved and a lowest resistivity of 8.693×10-4 Ω cm was obtained.Blue shifting of the optical band gap was observed with an increasing in Ga doping,which can be explained on the basis of the Burstein-Moss effect.The optical constants of thin films were measured in the range of 400-1700nm by Spectroscopic ellipsometry (SE) and the simulation was carried out using a Cauchy equation with a Simple Grade Index.