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By flowing the conventional GaN template surface with Trimethylgallium(TMGa)in H2 and low NH3 ambient at low temperature followed by high-temperature annealing,Ga droplets and GaN nanoislands were formed on the surface.On the patterned surface droplet epitaxy of thin GaN layers was realized by flowing the sample surface with TMGa and low NH3 for 400 s in H2 ambient at 1035 ℃.Features such as improved surface smoothness and reduced defect-related yellow/blue emissions were observed indicating improvement of the surface/interface qualities for the treated GaN template.The Ga-rich GaN layer on the treated GaN template might reduce the lattice mismatch and enhance the lateral diffusion of adatoms.InGaN/GaN QWs on the treated GaN template are of relatively abrupt InGaN-GaN interfaces and more uniform QW thickness.The emission intensity from the InGaN/GaN QWs on the treated GaN template was enhanced by 20%than that on the conventional GaN template,which was attributed to the strain reduction and the improvement in crystalline quality.