【摘 要】
：
Ni-Mn-Zn ferrite films were prepared on silicon substrate with CeO2/YSZ (YSZ:yttria-stabilized ZrO2) as buffer layer by pulsed laser deposition.The effects of CeO2/YSZ buffer layer and oxygen pressure
【机 构】
：
School of Microelectronics and Solid State Electronics,University of Science and Technology of China
【出 处】
：
2013年全国博士生学术论坛——电子薄膜与集成器件
论文部分内容阅读
Ni-Mn-Zn ferrite films were prepared on silicon substrate with CeO2/YSZ (YSZ:yttria-stabilized ZrO2) as buffer layer by pulsed laser deposition.The effects of CeO2/YSZ buffer layer and oxygen pressure on the microstructures and magnetic properties of films were studied.It was shown that the CeO2/YSZ buffer layer could greatly improve the crystallization of the film.The film crystallinity, microstructure and soft magnetic properties were sensitive to the oxygen pressure.High quality film with preferred (311) orientation, uniform surface structure, high purity and excellent soft magnetic properties can be obtained at the oxygen pressure of 1 Pa.The saturation magnetization (Ms) is higher than 230 emu/cm3 with a coercivity (Hc) smaller than 30 Oe, which is suitable to be used in high-frequency devices.
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