Reactive magnetron sputtering technique was used to gain titanium nitride (TiN) films on W18Cr4V high-speed steel and GCr15 bearing steel substrates at low temperature.In order to ensure substrates in a state of low temperature all the time during deposition,radio-frequency power were controlled less than 130 W,and a special-designed nickel chromium triangle nisiloy type thermocouple unit was used to measure the temperature during deposition.The technical process of TiN films are as follows:anode ion etching (-1200 V,10 min),advance deposition Ti (argon flow rate was 2.08× 10-6kg/s,VDC=180 V,Ubias=0 V,10min).deposition TiN (argon flow rate was 2.08× 10-6 kg/s,nitrogen flow rate was 4.17×10-8 kg/s,VDc=180 V,Ubias=-30 V,100~120 min).