本文主要研究用作3～5μm红外波段的PtSi/p—Si肖特基势垒大线阵512元和大面阵128×64元IRCCD器件的均匀性。从解决均匀性问题出发,在研制64元PtSi肖特基势垒IRCCD的过程中,开展了器件均匀性的研究,并做了大量实验。研究工作取得了一定的成绩。我们又将本论文的研究成果反馈到上述器件的研制中去,器件的非均匀性在30%以下,较好的器件可达0.9%。由于均匀性得以初步解决,该器件已摄出清晰的热图像(于1987年元月通过部级设计定型鉴定)。 In this paper, we study the uniformity of the PtSi / p-Si Schottky barrier large linear array and the large-area array 128 × 64 IRCCD device for 3 ~ 5μm infrared band. In order to solve the problem of uniformity, in the development of the 64-membered PtSi Schottky barrier IRCCD, the research on the uniformity of devices was carried out and a large number of experiments were done. The research has made some achievements. We will return the research results of this paper to the development of these devices, the device non-uniformity of less than 30%, better devices up to 0.9%. Because of the uniformity of the initial solution, the device has taken a clear thermal image (in January 1987 through ministerial design stereotypes).