A Computational Fluid Dynamics Study on the Endovascular Treatment of Intracranial Aneurysms

来源 :首届内地与香港青年力学论坛2012(The 16th Annual Conference of Hong Kong So | 被引量 : 0次 | 上传用户:yintaozhy1988
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
  Intracranial aneurysm, a localized dilation of arterial blood vessels in the brain, is a severe cerebrovascular disorder.Without appropriate medical treatment, the rupture of intracranial aneurysms will result in high mortality rate due to excessive bleeding into the cavity surrounding the brain.
其他文献
  We study how heat transport is affected by polymer additives in a steady-state boundary layer flow above a heated plate.We consider the FENE-P (finitely ext
会议
  Metal magnetic memory (MMM) is a new, passive magnetic non-destructive method, which is effective in characterizing the early damage of ferromagnets, especi
会议
  In recent years, many works are focus on the modelling and simulation of flexible multibody systems, and the equations of motion are generally formulated as
会议
  Superelastic NiTi polycrystalline SMA strips, when subjected to uniaxial stretching,undergo deformation instability and transform from initial austenite to
会议
  Memory effects have been recognized to be very important in turbulent shear flows.And turbulent flows of Newtonian fluids have already been compared with no
会议
  Strength and ductility are two main exclusive mechanical properties for steels and alloys.Responding to energy saving strategy and lightweight engineering,
会议
  The present paper examines the dynamic stability of an elastic beam on the elastic foundation when the stress wave effect is taken into consideration.Based
会议
  Recently, there has been growing interest in study of the electrocaloric effect (ECE) which is a change in the temperature of a material upon the applicatio
会议
  Fiber reinforcement has become a popular means in practice for soil reinforcement, near surface soil stabilization and mitigation of the risk of soil liquef
会议
  The ferroelectric-gate field-effect transistor (FeFET) has received much attention because of its promise for applications in low-power, low-voltage, high-d
会议