论文部分内容阅读
The dual interlocked cell (DICE) is known immune to single node strike because of its redundant structure.However, it is sensitive to multiple nodes strike.With the technology scaling down, the probability of single event strike on multiple nodes increases.Hence, the hardened efficiency of DICE decreases with device size shrinking.A three dimensional (3D) device/circuit mixed model is constructed using technology computer aided design (TCAD), which is used to investigate the sensitivity between the sensitive node pairs in DICE cell and the effect of distance between the sensitive pair on upset LET threshold in 65nm DICE.The results indicate that the critical charge of a sensitive node pair is very low in 65 nm process, and the increasing of the distance between the sensitive nodes is still effective to raise the LET threshold for SEU.