Evolution of bonding networks and electronic states in B2O at high pressure

来源 :第26届国际高压科学技术大会、第8届亚洲高压科技学术会议暨第19届中国高压科学技术会议(The 26th Interna | 被引量 : 0次 | 上传用户：zyz2574100

【摘要】

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【作者】

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Jianyun Wang Quan Li Chris J.Pickard Yanming Ma

【机构】

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State Key Laboratory of Superhard Materials and College of Materials Science and Engineering,Jilin U

【出处】

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第26届国际高压科学技术大会、第8届亚洲高压科技学术会议暨第19届中国高压科学技术会议(The 26th Interna

【发表日期】

：

2017年10期

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　　Boron is one of the most fascinating and important elements that can adopt a rich variety of crystal structures with unusual and complex covalent bonds.[1,2] The striking semiconductivity of boron stems from the forming three-center bonds on the triangular planes within a molecular-like icosahedron and among three icosahedra that compensate for the electron deficiency of boron.

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Evolution of bonding networks and electronic states in B2O at high pressure

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