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5. Detaching the electron localization from nontrivial topology in Kondo insulators

Detaching the electron localization from nontrivial topology in Kondo insulators

来源 :第26届国际高压科学技术大会、第8届亚洲高压科技学术会议暨第19届中国高压科学技术会议(The 26th Interna | 被引量 : 0次 | 上传用户：yumimiteresa

【摘 要】

：

Kondo insulators(KIs) develop a narrow gap at the Fermi level and have been proposed as candidates to realize topological insulator states [1].

【作 者】

：

J.Larrea J V.Martelli H.Winkler J.H(a)nel A.Prokofiev E.Moura M.Fontes E.Baggio-Saitovitch A.Eichler H.Ronnow S.Paschen 

【机 构】

：

Centro Brasileiro de Pesquisas Físicas,Rua Doutor Xavier Sigaud 150,Rio de Janeiro CEP 22290-180,Bra

【出 处】

：

第26届国际高压科学技术大会、第8届亚洲高压科技学术会议暨第19届中国高压科学技术会议(The 26th Interna

【发表日期】

：

2017年10期

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　　Kondo insulators(KIs) develop a narrow gap at the Fermi level and have been proposed as candidates to realize topological insulator states [1].

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