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5. Deposition and properties of hydrogenated microcrystalline silicon (μc-Si∶H) films by HWCVD and RF-P

Deposition and properties of hydrogenated microcrystalline silicon (μc-Si∶H) films by HWCVD and RF-P

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：duyuh

【摘 要】

：

Radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique is widely used in preparing uniform and large area a-Si:H films for various photoelectric devices.

【作 者】

：

Sun Xiaofei Zhang Guifeng Jiang Lina 

【机 构】

：

Key Laboratory of Materials Modification by Laser, Ion and Electron Beam, Ministry of Education, Sch

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

μc-Si∶H films RE-PECVD HWCVD 

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Radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique is widely used in preparing uniform and large area a-Si:H films for various photoelectric devices.

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