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In metal/oxide/metal capacitor-like structures,the interface between the switching material and the electrode can play an important role in resistive switching.When depositing oxide thin films on a metal bottom electrode at elevated temperatures,the interdiffusion at the oxide/metal interface becomes an essential factor.This influences the metal/oxide contact formation and the electrical properties of the whole capacitor stack.This work reports the effect of Ti diffusion on the bipolar resistive switching in Au/BiFeO3/Pt/Ti capacitor-like stuctures.Polycrystalline BiFeO3 thin films are deposited by pulsed laser deposition at different temperatures on Pt/Ti/SiO2/Si substrates.