High rate dry etching of IGZO by BCl3/O2 plasma

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：cpts

【摘要】

：

The Indium-Gallium-Zinc Oxide (IGZO) has received much attention as a candidate for the channel material of oxide semiconductor TFT due to its high mobility,high stability,and low temperature processe

【作者】

：

Wanjae Park Ki-Woong Whang

【机构】

：

Plasma Laboratory, Dept. of Electrical Engineering and Computer Science, Seoul National University,5

【出处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

IGZO (Indium Gallium Zinc Oxide) Dry etch BCl3/O2 plasma BO radical

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High rate dry etching of IGZO by BCl3/O2 plasma

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