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Two 2-diazo-1-naphthoquinone-4-sulfonates of poly(4-hydroxylstyrene) were prepared to form i-line photoresists.In the laser interference lithography experiments of one of the photorsists,elliptic cylindrical nano tunnels aligned in the inner of the resist film.The shape and size of the nano tunnels keep unchanged even under increased exposure dose,indicating that the exposure energy is confined within the tunnel space.The formation of the nano-tunnel is resulted from the permeation of the developer into the film.