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Sb-Te phase change materials have been a focus of interest because of its fast crystallization and low melting point,while the drawback of the low crystallization temperature impedes its application for phase change memory.[1]In this paper,Sb-Te-Se phase change materials are prepared on Si/SiO2 substrates using cosputtering by Sb2Te and Sb2Se3 targets with different power.The phase change characteristics of Sb-Te-Se films were systematically studied by in-situ resistance-temperature measurement,X-ray diffraction(XRD),Raman scattering spectroscopy,X-ray photoelectron spectra(XPS),and Transmission electron microscopy(TEM).For preferred Sb56Te24Se20and Sb55Te22Se23 films,the 10-year data retention life time can be up to 93.1 and 102.6 ℃,which are higher than that of Ge2Sb2Te5(GST,82 ℃).Both amorphous and crystalline resistance increases with Se content.The resistance ratios between two states maintain almost 3 orders of magnitude.The results of XRD,XPS,and Raman indicate that the Se atoms bond with Sb atoms and form Sb2SeTe2 phase in annealed films which contributes to the increasement of the crystallization temperature.[2] The results of TEM images and the corresponding selected area electron diffraction(SAED)patterns prove the existence of Sb2Te and Sb2SeTe2 phase,which is in good agreement with XRD results.