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5. Defect Formation and Properties in SiC as Revealed by Ab Initio Molecular Dynamics Simulation

Defect Formation and Properties in SiC as Revealed by Ab Initio Molecular Dynamics Simulation

来源 :9th International Conference on Computer Siumlaation of Radi | 被引量 : 0次 | 上传用户：xigua871030

【作 者】

：

Fei Gao[1] William J.Weber[1] Haiyan Xiao[2] Xiaotao Zu[2] 

【机 构】

：

Pacific Northwest National Laboratory, Richland, WA 99352, USA

【出 处】

：

9th International Conference on Computer Siumlaation of Radi

【发表日期】

：

2008年10期

【关键词】

：

Defect Properties Ab initio simulation Charge Transfer Silicon Carbide 

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