【摘 要】
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Multilevel storage,namely high density storage,is a key factor for the competitiveness of phase change memory(PCM)technology in the nonvolatile memory market.This paper presents the superlattice-like(
【机 构】
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Faculty of Information Science and Engineering,Ningbo University,Zhejiang,315211,China
【出 处】
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第八届中国功能玻璃学术研讨会暨新型光电子材料国际论坛
论文部分内容阅读
Multilevel storage,namely high density storage,is a key factor for the competitiveness of phase change memory(PCM)technology in the nonvolatile memory market.This paper presents the superlattice-like(SLL)GaSb/Sb4Te thin film with the character of three stable resistance states.The 10-year data retention lifetime of SLL GaSb/Sb4Te thin film was 115 ℃(the amorphous state)and 149℃(the intermediate state),which are excessively higher than Ge2Sb2Te5(GST,82℃).The analysis of both XRD and Raman patterns confirmed to the two step phase change in SLL GaSb/Sb4Te thin film.Phase change memory cell based on the SLL GaSb/Sb4Te thin film also verified the multilevel storage.
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