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5. B-Si system at 1atm and Under Pressure

B-Si system at 1atm and Under Pressure

来源 :第26届国际高压科学技术大会、第8届亚洲高压科技学术会议暨第19届中国高压科学技术会议(The 26th Interna | 被引量 : 0次 | 上传用户：wlxingyun

【摘 要】

：

Silicon borides are classical refractory materials because of their thermal stability.Recently,boron-doped silicon materials have attracted considerable attentions for their potential as promising sup

【作 者】

：

Xiaowei Liang Linyan Wang Cancan Shao Guoying Gao 

【机 构】

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State Key Laboratory of Metastable Materials Science and Technology,Yanshan University,Qinhuangdao,0

【出 处】

：

第26届国际高压科学技术大会、第8届亚洲高压科技学术会议暨第19届中国高压科学技术会议(The 26th Interna

【发表日期】

：

2017年10期

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　　Silicon borides are classical refractory materials because of their thermal stability.Recently,boron-doped silicon materials have attracted considerable attentions for their potential as promising superconductors.

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