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5. Hexagonal boron nitride substrate induced higher carrier mobility in phosphorene:A first principles

Hexagonal boron nitride substrate induced higher carrier mobility in phosphorene:A first principles

来源 :中国物理学会2015年秋季会议 | 被引量 : 0次 | 上传用户：zhpf

【摘 要】

：

The Hexagonal boron nitride(h-BN)substrate has been reported that it can improve the carrier mobility of thin films [1].And the improvement makes the thin film a better candidate for nanoelectronics.

【作 者】

：

Jiafeng Xie Mingsu Si 

【机 构】

：

Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education,Lanzhou University,

【出 处】

：

中国物理学会2015年秋季会议

【发表日期】

：

2015年7期

【关键词】

：

carrier mobility phosphorene substrate first principle calculation 

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　　The Hexagonal boron nitride(h-BN)substrate has been reported that it can improve the carrier mobility of thin films [1].And the improvement makes the thin film a better candidate for nanoelectronics.

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