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To measure ion dose in plasma source ion implantation (PSII) is very important for monitoring processing reliability and repeatability.
Real-Time Dose Monitoring System by Sensing Implanter Current and Biased Pulse Voltage in Plasma Sou
【摘 要】
：
To measure ion dose in plasma source ion implantation (PSII) is very important for monitoring processing reliability and repeatability.
【机 构】
：
Department of Electrical Engineering, HanYang University,17 Haengdang-dong, Seongdong-gu, Seoul 133-
【出 处】
：
2011年第三届微电子及等离子体技术国际会议
【发表日期】
：
2011年9期
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