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  5. Characterization and Optimization of High Efficiency In GaN-Based High Voltage Light-Emitting Diodes

Characterization and Optimization of High Efficiency In GaN-Based High Voltage Light-Emitting Diodes

来源 :第十届中国国际半导体照明论坛 | 被引量 : 0次 | 上传用户：abcprint
【摘 要】
：
The efficiency and opto-electrical characteristics of InGaN-based high voltage light emitting diodes (HV LEDs) are investigated and characterized.The record high wall plug efficiency (mW/W) was achiev
【作 者】
：
A. S. Liu W. S. Chen M. H. Hsieh 
【机 构】
：
Research and Development Center,Epistar Corporation5,Li-Hsin Rd.V,Hsinchu Science Park,Hsinchu 300 T
【出 处】
：
第十届中国国际半导体照明论坛
【发表日期】
：
2013年8期
【关键词】
：
wall plug efficiency current spreading high voltage light-emitting diodes finger 
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论文部分内容阅读
　　The efficiency and opto-electrical characteristics of InGaN-based high voltage light emitting diodes (HV LEDs) are investigated and characterized.The record high wall plug efficiency (mW/W) was achieved implying that 45V HV LEDs with optimized microcells have superior current spreading.As a result,the luminous efficiency of 45V HV LED with U-shape finger layout was enhanced by 12% compared to that of 48V HV LED under 20 mA operation,whereas the efficiency drooping behaviors are also reduced from 18.6% by 48V HV LED to 16.2% by 45V HV LED relative to 60 mA.Moreover,optimized microcells exhibited lower series resistance and forward voltage,as well as higher light extraction,sufficiently account for higher wall-plug efficiency performance.
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