【摘 要】
：
Hydrogenated nanocrystalline silicon (nc-Si∶H) films were prepared using ICP-CVD system attached with four internal U-shaped low inductance antennas.Ar,He,and Ne gases were introduced into SiH4/H2 pla
【机 构】
：
Dept.of Materials Engineering, Ming Chi University of Technology, Taishan, Taipei,Taiwan;Center for
【出 处】
：
13th Asia-Pacific Conference on Plasma Science and Technolog
论文部分内容阅读
Hydrogenated nanocrystalline silicon (nc-Si∶H) films were prepared using ICP-CVD system attached with four internal U-shaped low inductance antennas.Ar,He,and Ne gases were introduced into SiH4/H2 plasma during deposition,with the variation of gas flow rate and SiH4/H2 ratios.During deposition,an OES (optical emission spectrometer) and a plasma probe were used to characterize the conditions of plasma.The crystalllinity,structure,and Si-H bonding of these Si∶H films were investigated using Raman scattering spectroscopy,XRD,and FTIR.The correlations of plasma characteristics and thin film properties were studied.It is found that the crystallinity of nc-Si∶H film changes with the introduction of Ar,He,and Ne gases,especially when Ar and He are added.The plasma density,ISIH*,and IHa* may increase with the increase of the inert gas flow,most likely due to penning ionization effect.The deposition rate decreases with the inert gases.This might be caused by the enhancement of hydrogen etching.
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