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  5. Performance Dengradation of Si Device With the Change of Lifetime Under Laser Irradation

Performance Dengradation of Si Device With the Change of Lifetime Under Laser Irradation

来源 :LIMIS 2016——The 4th International Symposium on Laser Interac | 被引量 : 0次 | 上传用户：a1402070128
【摘 要】
：
When laser interacts with semiconductor,such as laser processing,laser-induced surface melting and liquid-state diffusion of dopant atoms occurs.
【作 者】
：
Yubin Shi Jianming Zhang Zhen Zhang Xinwei Lin Deyan Chen Zuodong Xu 
【机 构】
：
State Key Laboratory of Laser Interaction with Matter, Northwest Institute of Nuclear Technology, Xi
【出 处】
：
LIMIS 2016——The 4th International Symposium on Laser Interac
【发表日期】
：
2016年8期
【关键词】
：
Semiconductor cartier lifetime simulation laser irradation 
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　　When laser interacts with semiconductor,such as laser processing,laser-induced surface melting and liquid-state diffusion of dopant atoms occurs.
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