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  5. Reliability Tests and Improvements on Sc-contacted n-type Carbon Reliability Tests and Improvements

Reliability Tests and Improvements on Sc-contacted n-type Carbon Reliability Tests and Improvements

来源 :中国物理学会2013年秋季学术会议 | 被引量 : 0次 | 上传用户：tintin123456
【摘 要】
：
Scandium (Sc) contacted n-type carbon nanotube (CNT) field-effected transistors (FETs) with back and top-gate structure were fabricated,and their stability in air were investigated.It was shown that o
【作 者】
：
Shibo Liang Zhiyong Zhang Lian-Mao Peng 
【机 构】
：
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking Un
【出 处】
：
中国物理学会2013年秋季学术会议
【发表日期】
：
2013年11期
【关键词】
：
Stability Carbon Nanotube n-type Field-Effect Transistor Passivation Reliability 
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　　Scandium (Sc) contacted n-type carbon nanotube (CNT) field-effected transistors (FETs) with back and top-gate structure were fabricated,and their stability in air were investigated.It was shown that oxygen and water molecules may affect both the nanotube channel and Sc/nanotube contacts,leading to deteriorated contact quality and device performance.
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