There are many essays about P-type Quantum Dot Solar Cells,and the photovoltaic conversion efficiency is not satisfactory.At present,the reports about p-type QDSCs based on NiO are less,and so are the choices of quantum dot.And the valence band position of quantum dot material should be lower than that of NiO,thus the carvity can smoothly transmit to NiO.Here we have discussed the impact of surface morphology and thickness of NiO on the performance of cells.And through the experiments on different quantum dot sensitizer tried,we found that CdTeO3 was proper.The study shows that the doping of CdTeO3 with Mg leads to enhanced current density,increased open circuit voltage and consequently enhanced photoelectric transformation efficiency.