Research on photoelectric characteristics of SiC-NWFET in a harsh environment

来源 :International Conference on Nanoscience & Technology,China 2 | 被引量 : 0次 | 上传用户：funny_109

【摘要】

：

The light-green cotton-like SiC nanowires have been prepared by pyrolysis of a polymer precursor with ferrocene as the catalyst by a chemical vapor deposition(CVD) route.Single SiC nanowires(NW) have

【作者】

：

Ma Wenbo Huang XiaoKun Zhou Yingqiu He Yanlan Yu Xiaoyan He Biao Peng Gang

【机构】

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College of Science,National University of Defense Technology,Changsha 410073,China ;College of Scien

【出处】

：

International Conference on Nanoscience & Technology,China 2

【发表日期】

：

2013年3期

【关键词】

：

SiC NW-FET Photoelectric characteristics FIB Harsh environment

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　　The light-green cotton-like SiC nanowires have been prepared by pyrolysis of a polymer precursor with ferrocene as the catalyst by a chemical vapor deposition(CVD) route.Single SiC nanowires(NW) have been obtained by ethanol ultrasonic dispersion process and a single SiC NW-FET (nanowire field effect transistor) was fabricated by FIB (Focus-Ion-Beam) method on highly doped n-type silicon wafers with 300nm silicon oxide.

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