• 不 限
  • 期刊论文
  • 硕博论文
  • 会议论文
  • 报 纸
  • 英文论文
  2. 您的位置
  3. 首页
  4. 会议论文
  5. Study of Infrared Imaging Detecting Unit Based on Pt Films

Study of Infrared Imaging Detecting Unit Based on Pt Films

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：gengxuetao
【摘 要】
：
The infrared imaging detecting technology has broad application prospects in military and civilian fields.The bolometer is one of mainstream uncooled infrared detectors,because it has advantages of li
【作 者】
：
Changlong Cai Weiguo Liu Huan Liu 
【机 构】
：
Micro-optoelectrical System Laboratory, Xi'an Technological University, Xi'an 710032, China
【出 处】
：
2011年第三届微电子及等离子体技术国际会议
【发表日期】
：
2011年9期
【关键词】
：
Pt films TCR micro-structure detecting unit 
下载到本地 , 更方便阅读
下载此文 赞助VIP
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
The infrared imaging detecting technology has broad application prospects in military and civilian fields.The bolometer is one of mainstream uncooled infrared detectors,because it has advantages of light weight,wide dynamic range,excellent response linearity and without refrigeration and chopper which leads to low manufacturing cost.
其他文献
Discharge property and materials application of a pulsed high-pressure dc glow plasma
A pulsed dc glow discharge plasma was formed with the power of 15 kW under the high gas pressures about 200 Torr.The discharge features of the DC plasma were investigated by using optical emission spe
会议
Dc Glow PlasmaHigh PressureDischarge Property
Material properties of hydrogenated nanocrystalline silicon thin films by RF-PECVD using He-SiH4 mix
Hydrogenated nanocrystalline silicon (nc-Si:H) and amorphous silicon thin film are expected to be promising materials for solar cell and thin film transistor.Especially,nc-Si∶H thin films have been re
会议
hydrogenated nanocrystalline siliconPECVDHe-SiH4
Electrical Performance of Organic Field Effect Transistor (OFET) with High-k Gate Oxides under Conse
Organic materials such as pentacene have been attracted due to the low cost,easy process and flexibility.1 These materials are being widely used in organic electronic circuits such as organic field ef
会议
Organic field effect transistor (OFET)High-k gate dielectricElectrical Stress
Improved Al2O3 Dielectric Properties using Remote Plasma Atomic Layer Deposition with Negative-Biase
Atomic layer deposition (ALD) has been a industry-standard deposition method because it can provide precise thickness control as well as good step coverage.
会议
Atomic Layer DepositionHigh-k gate dielectricNegative-Biased DC power
Growth processes and crystallographic properties of nanographenes synthesized employing in-liquid pl
Nanographene materials have attracted much attention as their unique structures,interesting properties,and promising device applications.Recently, we established a high-speed synthesis technique of na
会议
NanographeneIn-liquid plasmatransmission electron microscopyRaman spectroscop
GeO2-core/ZnO-sheath nanorods
Germanium dioxide (GeO2) is one of the dielectric oxides that are promising for optical devices such as optical waveguides for integrated optical systems.
会议
GeO2ZnONanorods
Hydrogen trapping enhanced by ion induced damages in silicon
With the use of temperature programmed desorption (TPD),properties of hydrogen trapping in silicon during argon and hydrogen ion implantation have been studied.
会议
Temperature Programmed DesorptionHydrogen beamEtchingImplantation
Photoconductive detector based on multi-layer graphene sensitive materials
A simple photoconductive detective device was fabricated by patterning the magnetron sputtered Pt/Ti electrode and multi-layer graphene films obtained by reduction the graphene oxide with a sensitive
会议
Photoconductive DetectorGrapheneWhite light Response
Investigation on the thin films on aluminum surface deposited by CF4/Ar and CF4 /O2/Ar plasmas by us
The temporally resolved optical emission spectroscopy (OES) is measured in capacitively coupled CF4/Ar or CF4/O2/Ar plasmas after CF4 or CF4/O2 is cut off.
会议
optical emission spectroscopycapacitively coupled plasmathin film
The morphology changes of Multi-walled carbon nanotubes film by a pulsed laser irradiation
The prepared multi-walled carbon nanotube (MWCNT) film was mounted on the holder,and the film surface was irradiated with the second harmonic (λ=532 nm) of a pulsed Nd:YAG laser (pulse width=5 ns) in
会议
Multi-walled carbon nanotubesLaser heatingScanning electron microscopyImage p