Voltage-Controlled Bistable Resistive Switching Behavior Based on Ni0.5Zn0.5Fe2O4/BiFeO3/Nb:SrTiO3 H

来源 :中国物理学会2015年秋季会议 | 被引量 : 0次 | 上传用户：hualanfengyi

【摘要】

：

Resistive random accessmemory(RRAM)basedon resistive switching effectsis one of the mostpromising candidates for future nonvolatile memory devicesbecause of its high scalability,capacitor-like cell st

【作者】

：

Lei Wu Changjun Jiang Desheng Xue

【机构】

：

Key Laboratory for Magnetism and Magnetic Materials of MOE,Lanzhou University,Lanzhou 730000

【出处】

：

中国物理学会2015年秋季会议

【发表日期】

：

2015年7期

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Voltage-Controlled Bistable Resistive Switching Behavior Based on Ni0.5Zn0.5Fe2O4/BiFeO3/Nb:SrTiO3 H

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