A self-aligned process to fill up electrode gap based on the wet etching properties of Ge2Sb2Te5 for

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户:zoujing0505
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  Ge2Sb2Te5(GST)phase change material is widely used in the study of Phase change random access memory(PRAM).Researches show if phase change material is confined to the electrode gap,the heating efficiency can be improved and the effective transformation volume will be reduced.
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