A Comparison of dry etch characteristics using NF3 and SF6 in the contact hole etch process in the T

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：hsu_mike

【摘要】

：

Currently SF6 chemistry is mainly used for dry etching a SiNx thin film which is used for the dielectric layer in the TFT-LCD,its GWP (Global Warming Potential) index is relatively high in the PFC (Pe

【作者】

：

HeeHwan Choe Jae-Hong Jeon Jong Hyun Seo Kang-Woong Lee

【机构】

：

School of Electronics, Telecommunications, and Computer Engineering, Korea Aerospace University,Hwaj

【出处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Display Device Plasma Process Etching Perfluorocarbons

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A Comparison of dry etch characteristics using NF3 and SF6 in the contact hole etch process in the T

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