【摘 要】
：
during the growth of GaN based light emitting diodes (LED) on dry etched patterned sapphire substrates (DPSS) in a CRIUS? II-XL Close Coupled Showerhead? (CCS?) MOVPE reactor with a 19x4” wafer config
【机 构】
：
AIXTRON SE Kaiserstrasse 98,52134 Herzogenrath,Germany
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during the growth of GaN based light emitting diodes (LED) on dry etched patterned sapphire substrates (DPSS) in a CRIUS? II-XL Close Coupled Showerhead? (CCS?) MOVPE reactor with a 19x4” wafer configuration.Reflectivity and curvature measurements give an insight into the growth of the buffer layer.Reflectivity measurements give insight into the morphological development during the buffer with features correlated to curvature and final device structure quality,and the curvature measurements give a direct reading of the curvature.Both correlate to material properties such as XRD full width half maximum (FWHM).The morphology of the DPSS and subsequent growth creates a challenge for surface temperature measurements,required for Topside Temperature Control.Approaches to overcome these issues will be discussed.
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